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2003-07-03 page 1 spp17N80C3, spb17N80C3 spa17N80C3 final data cool mos? power transistor v ds 800 v r ds ( on ) 0.29 ? i d 17 a feature ? new revolutionary high voltage technology ? worldwide best r ds ( on ) in to 220 ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance ? p-to-220-3-31: fully isolated package (2500 vac; 1 minute) p-to220-3-31 p-to263-3-2 p-to220-3-1 p-to220-3-31 1 2 3 marking 17N80C3 17N80C3 17N80C3 type package ordering code spp17N80C3 p-to220-3-1 q67040-s4353 spb17N80C3 p-to263-3-2 q67040-s4354 spa17N80C3 p-to220-3-31 q67040-s4441 maximum ratings parameter symbol value unit spa continuous drain current t c = 25 c t c = 100 c i d 17 11 17 1) 11 1) a pulsed drain current, t p limited by t j max i d p uls 51 51 a avalanche energy, single pulse i d =3.4a, v dd =50v e as 670 670 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =17a, v dd =50v e ar 0.5 0.5 avalanche current, repetitive t a r limited by t j max i a r 17 17 a gate source voltage v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 208 42 w spp_b operating and storage temperature t j , t st g -55...+150 c
2003-07-03 page 2 spp17N80C3, spb17N80C3 spa17N80C3 final data maximum ratings parameter symbol value unit drain source voltage slope v ds = 640 v, i d = 17 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.6 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.6 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 800 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =17a - 870 - gate threshold voltage v gs ( th ) i d =1000 a, v gs =v d s 2.1 3 3.9 zero gate voltage drain current i dss v ds =800v, v gs =0v, t j =25c t j =150c - - 0.5 - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =11a t j =25c t j =150c - - 0.25 0.78 0.29 - ? gate input resistance r g f =1mhz, open drain - 0.7 -
2003-07-03 page 3 spp17N80C3, spb17N80C3 spa17N80C3 final data electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =11a - 15 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 2320 - pf output capacitance c oss - 1250 - reverse transfer capacitance c rss - 60 - effective output capacitance, 5) energy related c o(er) v gs =0v, v ds =0v to 480v - 59 - effective output capacitance, 6) time related c o(tr) - 124 - turn-on delay time t d(on) v dd =400v, v gs =0/10v, i d =17a, r g =4.7 ? , t j =125c - 25 - ns rise time t r - 15 - turn-off delay time t d(off) - 72 82 fall time t f - 6 9 gate charge characteristics gate to source charge q gs v dd =640v, i d =17a - 12 - nc gate to drain charge q gd - 46 - gate charge total q g v dd =640v, i d =17a, v gs =0 to 10v - 91 177 gate plateau voltage v ( plateau ) v dd =640v, i d =17a - 6 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 soldering temperature for to-263: 220c, reflow 5 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 6 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2003-07-03 page 4 spp17N80C3, spb17N80C3 spa17N80C3 final data electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 17 a inverse diode direct current, pulsed i sm - - 51 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =400v, i f = i s , d i f /d t =100a/s - 550 - ns reverse recovery charge q rr - 15 - c peak reverse recovery current i rrm - 51 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 1200 - a/s typical transient thermal characteristics symbol value unit symbol value unit spa spa r th1 0.00812 0.00812 k/w c th1 0.0003562 0.0003562 ws/k r th2 0.016 0.016 c th2 0.001337 0.001337 r th3 0.031 0.031 c th3 0.001831 0.001831 r th4 0.114 0.16 c th4 0.005033 0.005033 r th5 0.135 0.324 c th5 0.012 0.008657 r th6 0.059 2.522 c th6 0.092 0.412 spp_b spp_b external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2003-07-03 page 5 spp17N80C3, spb17N80C3 spa17N80C3 final data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 200 w 240 spp17N80C3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 30 35 w 45 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
2003-07-03 page 6 spp17N80C3, spb17N80C3 spa17N80C3 final data 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 20 v ds 30 v 0 5 10 15 20 25 30 35 40 45 50 55 60 a 70 i d 5v 6v 7v 8v 20v 10v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 20 v ds 30 v 0 5 10 15 20 25 a 35 i d 4v 4.5v 5v 5.5v 6v 6.5v 20v 10v 8v 7v
2003-07-03 page 7 spp17N80C3, spb17N80C3 spa17N80C3 final data 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 5 10 15 20 25 a 35 i d 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 ? 1.5 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 7v 8v 10v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 11 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 ? 1.6 spp17N80C3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 5 10 15 20 25 30 35 40 45 50 55 a 65 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 17 a pulsed 0 20 40 60 80 100 120 nc 160 q gate 0 2 4 6 8 10 12 v 16 spp17N80C3 v gs 0,8 v ds max ds max v 0,2
2003-07-03 page 8 spp17N80C3, spb17N80C3 spa17N80C3 final data 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp17N80C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 2 4 6 8 10 12 14 a 18 i ar t j (start) =125c t j (start) =25c 15 avalanche energy e as = f ( t j ) par.: i d = 3.4 a, v dd = 50 v 25 50 75 100 c 150 t j 0 50 100 150 200 250 300 350 400 450 500 550 600 mj 700 e as 16 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 720 740 760 780 800 820 840 860 880 900 920 940 v 980 spp17N80C3 v (br)dss
2003-07-03 page 9 spp17N80C3, spb17N80C3 spa17N80C3 final data 17 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 hz f 0 50 100 150 200 250 300 350 400 w 500 p ar 18 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 500 600 v 800 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c c iss c oss c rss 19 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 500 600 v 800 v ds 0 2 4 6 8 10 12 14 j 18 e oss
2003-07-03 page 10 spp17N80C3, spb17N80C3 spa17N80C3 final data definition of diodes switching characteristics
2003-07-03 page 11 spp17N80C3, spb17N80C3 spa17N80C3 final data p-to-220-3-1 a b a 0.25 m 2.8 15.38 0.6 2.54 0.75 0.1 0.13 1.27 4.44 b 9.98 0.48 0.05 all metal surfaces tin plated, except area of cut. c 0.2 10 0.4 3.7 c 0.5 0.1 0.9 5.23 13.5 0.5 3x metal surface min. x=7.25, y=12.3 2x 0.2 0.22 1.17 0.2 2.51 p-to-263-3-2 (d 2 -pak)
2003-07-03 page 12 spp17N80C3, spb17N80C3 spa17N80C3 final data p-to-220-3-31 (fullpak) please refer to mounting instructions (application note an-to220-3-31-01)
2003-07-03 page 13 spp17N80C3, spb17N80C3 spa17N80C3 final data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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